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| Excelics DATA SHEET * * * * * * +26.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15mA PER BIN RANGE 50 D EFA080A Low Distortion GaAs Power FET 510 116 D 48 340 100 40 S G S G S 95 50 80 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA Chip Thickness: 75 13 microns All Dimensions In Microns MIN 24.0 8.0 TYP 26.0 26.0 10.0 7.5 35 MAX UNIT dBm dB % 130 90 210 120 -2.0 300 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 55 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 260mA Ids Forward Gate Current 20mA 4mA Igsf Input Power 25dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 2.5 W 2.1 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA080A DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.983 -38.9 0.949 -71.6 0.916 -96.5 0.894 -115.4 0.879 -130.5 0.873 -140.5 0.871 -148.3 0.869 -154.1 0.872 -158.8 0.872 -162.7 0.873 -166.5 0.876 -169.7 0.879 -173.3 0.880 -177.4 0.882 178.3 0.886 173.2 0.889 168.2 0.892 162.8 0.897 157.9 0.905 153.4 0.923 152.7 0.928 150.2 0.936 147.8 0.939 146.5 0.945 145.2 0.944 144.7 8V, 1/2 Idss --- S21 --MAG ANG 6.602 158.2 5.927 135.8 4.998 118.0 4.191 104.1 3.536 92.2 3.028 82.8 2.628 74.6 2.311 67.5 2.058 61.1 1.857 55.2 1.689 49.5 1.557 43.9 1.446 38.4 1.356 32.9 1.276 27.2 1.207 20.9 1.141 14.6 1.075 8.3 1.010 1.7 0.949 -4.6 0.829 -9.6 0.769 -14.6 0.713 -19.7 0.664 -23.8 0.624 -27.3 0.592 -30.4 --- S12 --MAG ANG 0.029 65.4 0.050 49.2 0.061 36.4 0.066 27.2 0.068 19.6 0.069 14.5 0.068 10.3 0.067 7.4 0.065 3.8 0.063 3.0 0.061 1.8 0.060 1.0 0.058 -0.9 0.059 -2.3 0.057 -2.9 0.057 -4.6 0.057 -5.7 0.058 -7.1 0.057 -8.0 0.057 -9.8 0.053 -9.0 0.053 -9.5 0.052 -7.8 0.052 -5.4 0.053 -3.9 0.053 0.4 --- S22 --MAG ANG 0.421 -24.5 0.380 -45.7 0.343 -62.4 0.326 -75.6 0.327 -87.3 0.339 -95.6 0.359 -102.4 0.382 -107.5 0.408 -111.9 0.433 -115.1 0.457 -118.4 0.478 -121.4 0.495 -124.4 0.511 -127.6 0.522 -131.2 0.532 -135.3 0.542 -140.3 0.557 -145.3 0.568 -151.5 0.585 -157.6 0.627 -165.3 0.650 -170.5 0.680 -174.4 0.706 -177.2 0.728 -179.7 0.753 179.1 Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each. |
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